Semiconductor device and method of manufacturing the same, and electronic apparatus

ABSTRACT

The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device that enable prevention of generation of tape scraps from the dicing tape during dicing, and an electronic apparatus. When a semiconductor substrate on which a protective film for protecting a circuit surface is formed is divided, dicing is performed so as to form a portion in which the section width of the semiconductor substrate differs from the section width of the protective film. The present technology can be applied to a wafer level CSP manufacturing process and the like, for example.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase of International PatentApplication No. PCT/JP2017/022678 filed on Jun. 20, 2017, which claimspriority benefit of Japanese Patent Application No. JP 2016-132250 filedin the Japan Patent Office on Jul. 4, 2016. Each of the above-referencedapplications is hereby incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present technology relates to a semiconductor device and a method ofmanufacturing the semiconductor device, and an electronic apparatus.More particularly, the present technology relates to a semiconductordevice and a method of manufacturing the semiconductor device thatenable prevention of generation of tape scraps from the dicing tapeduring dicing, and an electronic apparatus.

BACKGROUND ART

In a wafer level chip size package (CSP), rewiring lines and terminals(electrode pads) are formed in a wafer, and the wafer level CSP is thendivided into pieces of the chip size. Blade dicing for cutting a waferinto pieces of the chip size with a blade rotating at high speed is usedfor dividing a wafer into chips.

In blade dicing, as disclosed in Patent Document 1, a die bonding filmand a semiconductor wafer are divided into pieces of the chip size witha blade, while the die bonding film and the semiconductor wafer aresecured onto a dicing tape, for example.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2014-203920

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, both the dicing tape and the die bonding film are resinmaterials. Therefore, tape scraps generated from the dicing tape duringthe dicing are pulled up by the blade, and might adhere to the sidesurfaces of the die bonding film. The adhering tape scraps will laterfall off and become the cause of a dust defect.

The present technology has been made in view of such circumstances, andaims to enable of prevention of generation of tape scraps from thedicing tape during dicing.

Solutions to Problems

A method of manufacturing a semiconductor device according to a firstaspect of the present technology includes dividing a semiconductorsubstrate to cause the semiconductor substrate to have a differentsection width from a section width of a protective film for protecting acircuit surface when dividing the semiconductor substrate, theprotective film being formed on the semiconductor substrate.

A semiconductor device according to a second aspect of the presenttechnology includes a semiconductor substrate on which a protective filmfor protecting a circuit surface is formed, and has a portion in which asection width of the semiconductor substrate differs from a sectionwidth of the protective film.

An electronic apparatus according to a third aspect of the presenttechnology includes a semiconductor device that includes a semiconductorsubstrate on which a protective film for protecting a circuit surface isformed, and has a portion in which a section width of the semiconductorsubstrate differs from a section width of the protective film.

In the first through third aspects of the present technology, there is aportion in which the section width of the semiconductor substrate onwhich the protective film for protecting the circuit surface is formeddiffers from the section width of the protective film.

The semiconductor device and the electronic apparatus may be independentdevices, or may be modules to be incorporated into other apparatuses.

Effects of the Invention

According to the first through third aspects of the present technology,generation of tape scraps from the dicing tape during dicing can beprevented.

Note that effects of the present technology are not limited to theeffects described herein, and may include any of the effects describedin the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram for explaining an outline of a process ofsemiconductor chips called wafer level CSPs.

FIG. 2 is a diagram for explaining a conventional process ofsingulation.

FIG. 3 is a diagram for explaining a dust defect caused by adhesion oftape scraps.

FIGS. 4A, 4B, and 4C are diagrams for explaining a first dicing methodto which the present technology is applied.

FIGS. 5A, 5B, and 5C are diagrams for explaining the first dicing methodto which the present technology is applied.

FIG. 6 is a schematic cross-sectional view of a semiconductor chipsingulated by the first dicing method.

FIGS. 7A and 7B are diagrams showing modifications of the first dicingmethod.

FIG. 8 is a diagram for explaining the outline of a second dicingmethod.

FIGS. 9A, 9B, and 9C are diagrams for explaining a first method offorming slits SL to a predetermined depth in a semiconductor substrate.

FIGS. 10A, 10B, and 10C are diagrams for explaining a second method offorming the slits SL to a predetermined depth in the semiconductorsubstrate.

FIG. 11 is a schematic cross-sectional view of a semiconductor chipsingulated by the second dicing method.

FIG. 12 is a diagram schematically showing a structure in a case where asingulated semiconductor chip is a solid-state imaging device.

FIG. 13 is a block diagram showing an example configuration of animaging apparatus as an electronic apparatus to which the presenttechnology is applied.

FIG. 14 is a diagram showing examples of use of an image sensor using asolid-state imaging device.

MODES FOR CARRYING OUT THE INVENTION

The following is descriptions of modes (hereinafter referred to asembodiments) for carrying out the present technology. Note thatexplanation will be made in the following order.

1. Outline of a process and problems of wafer level CSPs

2. First dicing method

3. Second dicing method

4. Outline of an example configuration of a solid-state imaging device

<1. Outline of a Process and Problems of Wafer Level CSPs>

FIG. 1 is a diagram for explaining an outline of a process ofsemiconductor chips (semiconductor devices) called wafer level CSPs.

As shown in FIG. 1, a glass stack wafer 14 is a semiconductor waferformed by stacking a sealing resin 12 and a glass substrate 13 on asemiconductor substrate 11 in which a plurality of integrated circuits,rewiring lines, terminals (electrode pads), and the like are formed on achip-by-chip basis, in a wafer form. The dashed lines on thesemiconductor substrate 11 indicate the boundaries between the chipsarranged in a matrix.

Semiconductor chips 21 called wafer level CSPs are manufactured bydividing the glass stack wafer 14 in a wafer form into pieces in thechip size.

In the chip dividing step, as shown in FIG. 2, for example, a dicingtape 32 is attached to the upper surface of a protective film 31 thatprotects the circuit surface of a rewiring layer or the like formed onthe semiconductor substrate 11. After that, dicing along dicing lines 33is performed with blades 34, so that the glass stack wafer 14 in thewafer form is divided into individual semiconductor chips 21. A dicingline 33 is a line corresponding to the central portion of a dicingstreet (a scribe line).

As a resin material is used for both the protective film 31 and thedicing tape 32, the tape scraps 35 of the dicing tape 32, which aregenerated when the dicing tape 32 is cut, might adhere to side surfacesof the protective film 31, as shown in FIG. 3. The tape scraps 35adhering to the side surfaces of the protective film 31 will later falloff and become the cause of a dust defect. Therefore, there is a demandfor a dicing method that does not generate the tape scraps 35.

In response to the demand, a dicing method that prevents generation ofthe tape scraps 35 will be described below. Note that, in thedescription below, components corresponding to those described withreference to FIGS. 1 through 3 are denoted by the same referencenumerals as those used in FIGS. 1 through 3, and explanation of them isnot unnecessarily repeated.

<2. First Dicing Method>

Referring now to FIGS. 4A, 4B, 4C, 5A, 5B, and 5C, a first dicing methodto which the present technology is applied is described.

First, as shown in FIG. 4A, a protective film 31 that protects thecircuit surfaces of rewiring lines, terminals, and the like is formed,by a spin coating technique or the like, on the surface of thesemiconductor substrate 11 of the glass stack wafer 14 on the oppositeside from the side of the sealing resin 12. A resin material such as aphotosensitive resist, for example, is used as the material of theprotective film 31.

As shown in FIG. 4B, the protective film 31 is then exposed to light viaa mask 41 in which regions of a predetermined width around dicing lines33 are shielded from light.

The protective film 31 in the regions exposed to the light passingthrough the mask 41 is cured, and the protective film 31 in the maskregions not exposed to the light is not cured. Therefore, as shown inFIG. 4C, slits SL having the predetermined width around the dicing lines33 are formed in the protective film 31. The slits SL in a planar shapeform the same lattice as the boundaries between the chips indicated bythe dashed lines on the semiconductor substrate 11 in FIG. 1. The widthSL_W of the slits SL is set at a smaller width than the cutting width ofthe blades 34 described later, or is set at about a width of 5 to 30 μm,for example.

Note that, in the slits SL shown in FIG. 4C, the protective film 31 isopened until the semiconductor substrate 11 is exposed, but part of theprotective film 31 in contact with the semiconductor substrate 11 may beleft. In other words, the depth of the slits SL may be formed to be apredetermined depth T2 (T2<T1) from the outermost surface, with respectto the entire thickness T1 of the protective film 31.

Next, as shown in FIG. 5A, the dicing tape 32 is attached to the uppersurface of the protective film 31 having the slits SL formed therein,and the entire glass stack wafer 14 is reversed.

As shown in FIG. 5B, the depth (the blade height) of the blades 34 ofthe dicing device is then set at such a position that reaches the slitsSL but does not reach the dicing tape 32, and cutting is performed alongthe dicing lines 33 in the planar direction.

As a result of cutting at the position where the blades 34 reach theslits SL, the glass stack wafer 14 in the wafer form is divided intoindividual semiconductor chips 21, as shown in FIG. 5C. The blade widthBL formed by the cutting with the blades 34 is about 35 to 60 μm, forexample.

As described above, by the first dicing method, a photolithographytechnique is used, so that the slits SL are formed along the dicinglines with respect to the protective film 31 to which the dicing tape 32is attached. After that, a dicing device cuts the semiconductorsubstrate 11 and the protective film 31 with the blades 34 untilreaching the slits SL.

By the first dicing method, it is only required that the blades 34 donot reach the dicing tape 32, and cutting is performed to a depth thatreaches the slits SL. Accordingly, the dicing tape 32 is not cut, and notape scraps 35 of the dicing tape 32 are generated. Thus, generation ofthe tape scraps 35 from the dicing tape 32 during dicing can beprevented.

FIG. 6 is a schematic cross-sectional view of a semiconductor chip 21singulated by the first dicing method.

The semiconductor chip 21 singulated by the first dicing method has aportion divided by slits SL and a portion divided by blades 34.Accordingly, the protective film 31 has a portion with a great sectionwidth and a portion with a small section width. As the portion with thesmall section width of the protective film 31 has the same width as thesection width of the semiconductor substrate 11, the section width ofthe protective film 31 is partially greater than the section width ofthe semiconductor substrate 11.

<Modifications>

FIGS. 7A and 7B show modifications of the above described first dicingmethod.

By the above described first dicing method, there are a portion dividedby the slits SL and a portion divided by the blades 34. Therefore, theprotective film 31 has a portion with a great section width and aportion with a small section width.

In view of this, after the step of cutting along the dicing lines 33with the blades 34 as shown in FIG. 5B, a step of removing thedifference in width may be added, for example. In this step, wet etchingis performed on the side surfaces of the slits SL of the protective film31 so that the width SL_W of the slits SL becomes the same as the bladewidth BL as shown in FIG. 7A.

Alternatively, in the step of removing the difference in width, wetetching may be performed on the side surfaces of the slits SL of theprotective film 31 so that the width SL_W of the slit SL of theprotective film 31 becomes wider than the blade width BL as shown inFIG. 7B.

As described above, after the step of cutting with the blades 34, thewidth SL_W of the slits SL may be increased by wet etching.

<3. Second Dicing Method>

Next, a second dicing method to which the present technology is appliedis described.

FIG. 8 is a diagram for explaining the outline of the second dicingmethod.

By the above described first dicing method, the portion in which theslits SL are formed is only in the layer of the protective film 31. Bythe second dicing method, on the other hand, slits SL are formed notonly in the layer of the protective film 31 but to a predetermined depthin the semiconductor substrate 11, as shown in FIG. 8.

Two kinds of methods can be adopted as the method of forming the slitsSL to a predetermined depth in the semiconductor substrate 11 asdescribed above.

Referring now to FIGS. 9A, 9B, and 9C, a first method of forming theslits SL to a predetermined depth in the semiconductor substrate 11 isfirst described.

First, as shown in FIG. 9A, light is emitted onto the protective film 31via the mask 41 in a manner similar to that shown in FIG. 4B of thefirst dicing method, so that slits SL are formed in predeterminedregions around the dicing lines 33 on the protective film 31. The depthof the slits SL at this point is the same as the thickness of theprotective film 31.

Next, as shown in FIG. 9B, the slits SL are further extended to apredetermined depth in the semiconductor substrate 11 by dry etching,the mask being the protective film 31 having the slits SL formed therein

After that, as shown in FIG. 9C, the dicing tape 32 is attached to theupper surface of the protective film 31 having the slits SL formedtherein, the entire glass stack wafer 14 is reversed, and the dicingdevice cuts the semiconductor substrate 11 with the blades 34 (notshown) at the blade height set at such a position that reaches the slitsSL located closer than the dicing tape 32, in a manner similar to thefirst dicing method described above with reference to FIGS. 5A, 5B, and5C. As a result, the glass stack wafer 14 in the wafer form is dividedinto individual semiconductor chips 21 as shown in FIG. 8.

Next, referring to FIGS. 10A, 10B, and 10C, a second method of formingthe slits SL to a predetermined depth in the semiconductor substrate 11is described.

First, as shown in FIG. 10A, the protective film 31 is formed on thesurface of the semiconductor substrate 11 of the glass stack wafer 14 onthe opposite side from the side of the sealing resin 12, and a resist 61is applied onto the upper surface of the protective film 31. Patterningis then performed on the resist 61 so that regions of a predeterminedwidth around the dicing lines 33 are opened.

Next, as shown in FIG. 10B, dry etching is performed to a predetermineddepth in the semiconductor substrate 11, using the patterned resist 61as a mask. As a result, the slits SL that penetrate the protective film31 to reach the predetermined depth in the semiconductor substrate 11are formed.

After that, as shown in FIG. 10C, the dicing tape 32 is attached to theupper surface of the protective film 31 having the slits SL formedtherein, the entire glass stack wafer 14 is reversed, and the dicingdevice cuts the semiconductor substrate 11 with the blades 34 (notshown) at the blade height set at such a position that reaches the slitsSL located closer than the dicing tape 32, in a manner similar to thefirst dicing method described above with reference to FIGS. 5A, 5B, and5C. As a result, the glass stack wafer 14 in the wafer form is dividedinto individual semiconductor chips 21 as shown in FIG. 8.

As described above, by the second dicing method, a photolithographytechnique and dry etching are used, so that the slits SL are formedalong the dicing lines in the protective film 31 to which the dicingtape 32 is attached and the semiconductor substrate 11. After that, adicing device cuts the semiconductor substrate 11 with the blades 34until reaching the slits SL. The surface of the semiconductor substrate11 to be cut by the blades 34 is the surface on the opposite side fromthe surface in which the slits SL are formed.

FIG. 11 is a schematic cross-sectional view of a semiconductor chip 21singulated by the second dicing method.

The semiconductor chip 21 singulated by the second dicing method has aportion divided by slits SL and a portion divided by blades 34.Accordingly, the semiconductor substrate 11 has a portion with a greatsection width and a portion with a small section width. As the widerportion of the semiconductor substrate 11 has the same section width asthe section width of the protective film 31, the section width of thesemiconductor substrate 11 is partially smaller than the section widthof the protective film 31.

Accordingly, in a case where the glass stack wafer 14 is divided byeither the first dicing method or the second dicing method, thesemiconductor chip 21 has a portion in which the section width of thesemiconductor substrate 11 differs from the section width of theprotective film 31.

<4. Outline of an Example Configuration of a Solid-State Imaging Device>

FIG. 12 schematically shows a structure in a case where a semiconductorchip 21 singulated by the above described first or second dicing methodis a solid-state imaging device.

A solid-state imaging device 81 as a semiconductor chip 21 convertslight incident on the device in the direction indicated by an arrow inthe drawing, into an electrical signal, and outputs the electricalsignal from external terminals 93.

The solid-state imaging device 81 includes a semiconductor substrate 91in which photodiodes PD for performing photoelectric conversion, aplurality of pixel transistors that control photoelectric conversionoperations and operations of reading photoelectrically-convertedelectrical signals, and the like are formed on a pixel-by-pixel basis.Note that, in the description below, the side of the incidence surfacethrough which light enters the solid-state imaging device 81 in FIG. 12will be referred to as the upper side, and the side of the other surfaceon the opposite side from the incidence surface will be referred to asthe lower side.

On the lower side of the semiconductor substrate 91, a protective film92 that protects rewiring lines (not shown) and the like, and theexternal terminals 93 are formed. The external terminals 93 are solderballs, for example.

On the upper surface of the semiconductor substrate 91, color filters 94of red (R), green (G), or blue (B), and on-chip lenses 95 are formed,for example. On the upper side of the on-chip lenses 95, a glasssubstrate 97 for protecting components in the solid-state imaging device81, particularly the on-chip lenses 95 and the color filters 94, isdisposed via a sealing resin 96.

In the solid-state imaging device 81 having the structure describedabove, the semiconductor substrate 91 corresponds to the above describedsemiconductor substrate 11, the sealing resin 96 corresponds to thesealing resin 12, and the glass substrate 97 corresponds to the glasssubstrate 13. Further, the protective film 92 corresponds to theprotective film 31.

<Example Applications to Electronic Apparatuses>

The present technology is not necessarily applied to a solid-stateimaging device. Specifically, the present technology can be applied toany electronic apparatus using a solid-state imaging device as an imagecapturing unit (a photoelectric conversion unit), such as an imagingapparatus like a digital still camera or a video camera, a mobileterminal device having an imaging function, or a copying machine using asolid-state imaging device as the image reader. A solid-state imagingdevice may be in the form of a single chip, or may be in the form of amodule that is formed by packaging an imaging unit and a signalprocessing unit or an optical system, and has an imaging function.

FIG. 13 is a block diagram showing an example configuration of animaging apparatus as an electronic apparatus to which the presenttechnology is applied.

The imaging apparatus 100 shown in FIG. 13 includes an optical unit 101formed with lenses and the like, a solid-state imaging device (animaging device) 102 having the structure of the solid-state imagingdevice 81 (the semiconductor chip 21) shown in FIG. 12, and a digitalsignal processor (DSP) circuit 103 that is a camera signal processorcircuit. The imaging apparatus 100 also includes a frame memory 104, adisplay unit 105, a recording unit 106, an operation unit 107, and apower supply unit 108. The DSP circuit 103, the frame memory 104, thedisplay unit 105, the recording unit 106, the operation unit 107, andthe power supply unit 108 are connected to one another via a bus line109.

The optical unit 101 gathers incident light (image light) from an objectand forms an image on the imaging surface of the solid-state imagingdevice 102. The solid-state imaging device 102 converts the amount ofthe incident light, which has been formed as the image on the imagingsurface by the optical unit 101, into an electrical signal for eachpixel, and outputs the electrical signal as a pixel signal. Thesolid-state imaging device 81 shown in FIG. 12, which is a solid-stateimaging device manufactured by adopting the first or second dicingmethod that prevents generation of the tape scraps 35 can be used as thesolid-state imaging device 102.

The display unit 105 is formed with a flat-panel display such as aliquid crystal display (LCD) or an organic electro-luminescence (EL)display, for example, and displays a moving image or a still imageimaged by the solid-state imaging device 102. The recording unit 106records the moving image or the still image imaged by the solid-stateimaging device 102 on a recording medium such as a hard disk or asemiconductor memory.

When operated by a user, the operation unit 107 issues operatinginstructions as to various functions of the imaging apparatus 100. Thepower supply unit 108 supplies various power sources as the operationpower sources for the DSP circuit 103, the frame memory 104, the displayunit 105, the recording unit 106, and the operation unit 107, asappropriate.

<Examples of Use of an Image Sensor>

FIG. 14 is a diagram showing examples of use of an image sensor usingthe above described solid-state imaging device 81.

An image sensor using the above described solid-state imaging device 81can be used in various cases where light, such as visible light,infrared light, ultraviolet light, or X-rays, is to be sensed, as listedbelow, for example.

-   -   Devices configured to take images for appreciation activities,        such as digital cameras and portable devices with camera        functions.    -   Devices for transportation use, such as vehicle-mounted sensors        configured to take images of the front, the back, the        surroundings, the inside, and the like of an automobile to        perform safe driving such as an automatic stop and recognize the        driver's condition and the like, surveillance cameras for        monitoring running vehicles and roads, and ranging sensors for        measuring distances between vehicles or the like.    -   Devices to be used in conjunction with home electric appliances,        such as television sets, refrigerators, and air conditioners, to        take images of gestures of users and operate the appliances in        accordance with the gestures.    -   Devices for medical care use and health care use, such as        endoscopes and devices for receiving infrared light for        angiography.    -   Devices for security use, such as surveillance cameras for crime        prevention and cameras for personal authentication.    -   Devices for beauty care use, such as skin measurement devices        configured to image the skin and microscopes for imaging the        scalp.    -   Devices for sporting use, such as action cameras and wearable        cameras for sports and the like.    -   Devices for agricultural use such as cameras for monitoring        conditions of fields and crops.

The present technology can also be applied not only to solid-stateimaging devices that sense an incident light quantity distribution ofvisible light and capture an image, but also to solid-state imagingdevices (physical quantity distribution sensors) in general, such as asolid-state imaging device that senses an incident quantity distributionof infrared rays, X-rays, particles, or the like and captures an image,or a fingerprint sensor that senses a distribution of some otherphysical quantity in a broad sense, such as pressure or capacitance andcaptures an image.

Further, the present technology can be applied not only to solid-stateimaging devices but also to any semiconductor device having anothersemiconductor integrated circuit.

Embodiments of the present technology are not limited to the abovedescribed embodiments, and various modifications can be made to themwithout departing from the scope of the present technology.

Note that the advantageous effects described in this specification aremerely examples, and the advantageous effects of the present technologyare not limited to them and may include effects other than thosedescribed in this specification.

It should be noted that the present technology may also be embodied inthe configurations described below.

(1)

A method of manufacturing a semiconductor device, including

dividing a semiconductor substrate to cause the semiconductor substrateto have a different section width from a section width of a protectivefilm for protecting a circuit surface when dividing the semiconductorsubstrate, the protective film being formed on the semiconductorsubstrate.

(2)

The method of manufacturing a semiconductor device according to (1), inwhich, after a slit is formed along a dicing line in the protective filmto which a dicing tape is attached, the semiconductor substrate is cutwith a blade to a position that reaches the slit.

(3)

The method of manufacturing a semiconductor device according to (1), inwhich, after a slit is formed along a dicing line in the protective filmto which a dicing tape is attached and the semiconductor substrate, thesemiconductor substrate is cut with a blade to a position that reachesthe slit.

(4)

The method of manufacturing a semiconductor device according to (3), inwhich a surface of the semiconductor substrate to be cut with the bladeis a surface on an opposite side from a surface in which the slit isformed.

(5)

The method of manufacturing a semiconductor device according to any of(2) to (4), in which a width of the slit is smaller than a width to becut away with the blade.

(6)

The method of manufacturing a semiconductor device according to any of(2) to (5), in which the slit is formed by a photolithography technique.

(7)

The method of manufacturing a semiconductor device according to any of(2) to (6), in which the slit is formed by dry etching.

(8)

The method of manufacturing a semiconductor device according to any of(2) to (7), in which, after the step of cutting with the blade, a widthof the slit is increased by wet etching.

(9)

The method of manufacturing a semiconductor device according to (8), inwhich, after the step of cutting with the blade, the width of the slitis increased to the same width as a cutting width of the blade.

(10)

The method of manufacturing a semiconductor device according to (8), inwhich, after the step of cutting with the blade, the width of the slitis increased to a greater width than a cutting width of the blade.

(11)

The method of manufacturing a semiconductor device according to any of(1) to (10), in which the semiconductor device is a solid-state imagingdevice.

(12)

A semiconductor device including

a semiconductor substrate on which a protective film for protecting acircuit surface is formed,

in which there is a portion in which a section width of thesemiconductor substrate differs from a section width of the protectivefilm.

(13)

An electronic apparatus including

a semiconductor device including

a semiconductor substrate on which a protective film for protecting acircuit surface is formed,

in which there is a portion in which a section width of thesemiconductor substrate differs from a section width of the protectivefilm.

REFERENCE SIGNS LIST

-   11 Semiconductor substrate-   12 Sealing resin-   13 Glass substrate-   14 Glass stack wafer-   21 Semiconductor chip-   31 Protective film-   32 Dicing tape-   33 Dicing line-   34 Blade-   81 Solid-state imaging device-   91 Semiconductor substrate-   92 Protective film-   96 Sealing resin-   97 Glass substrate-   100 Imaging apparatus-   102 Solid-state imaging device

The invention claimed is:
 1. A method of manufacturing a semiconductordevice, comprising: forming a protective film on a semiconductorsubstrate; and dividing the semiconductor substrate, wherein a firstsection width of a first portion of the protective film is greater thana section width of the semiconductor substrate, a second section widthof a second portion of the protective film is smaller than the sectionwidth of the semiconductor substrate, the first portion and the secondportion of the protective film are on a same side of the semiconductorsubstrate, the second portion of the protective film is closer to thesemiconductor substrate than the first portion of the protective film,and the protective film covers a circuit surface of the semiconductordevice during the division of the semiconductor substrate.
 2. The methodof manufacturing the semiconductor device according to claim 1, furthercomprising: forming a slit along a dicing line in the protective film,wherein a dicing tape is attached to the protective film; and cuttingthe semiconductor substrate with a blade to a position that reaches theslit.
 3. The method of manufacturing the semiconductor device accordingto claim 2, wherein a width of the slit is smaller than a width of thesemiconductor substrate which is cut away with the blade.
 4. The methodof manufacturing the semiconductor device according to claim 2, furthercomprising forming the slit by a photolithography technique.
 5. Themethod of manufacturing the semiconductor device according to claim 2,further comprising forming the slit by dry etching.
 6. The method ofmanufacturing the semiconductor device according to claim 2, furthercomprising increasing a width of the slit, by wet etching, after thecutting of the semiconductor substrate with the blade.
 7. The method ofmanufacturing the semiconductor device according to claim 6, furthercomprising increasing the width of the slit, to a width similar to acutting width of the blade, after the cutting of the semiconductorsubstrate with the blade.
 8. The method of manufacturing thesemiconductor device according to claim 6, further comprising increasingthe width of the slit, to a width greater than a cutting width of theblade, after the cutting of the semiconductor substrate with the blade.9. The method of manufacturing the semiconductor device according toclaim 1, comprising: forming a slit along a dicing line in theprotective film and the semiconductor substrate, wherein a dicing tapeis attached to the protective film, and cutting the semiconductorsubstrate with a blade to a position that reaches the slit.
 10. Themethod of manufacturing the semiconductor device according to claim 9,wherein a first surface of the semiconductor substrate that is cut withthe blade is on an opposite side of a second surface of thesemiconductor substrate, and the second surface of the semiconductorsubstrate includes the slit.
 11. The method of manufacturing thesemiconductor device according to claim 1, wherein the semiconductordevice is a solid-state imaging device.
 12. A semiconductor device,comprising: a semiconductor substrate; and a protective film on thesemiconductor substrate, wherein the protective film covers a circuitsurface of the semiconductor device, a first section width of a firstportion of the protective film is greater than a section width of thesemiconductor substrate, a second section width of a second portion ofthe protective film is smaller than the section width of thesemiconductor substrate, the first portion and the second portion of theprotective film are on a same side of the semiconductor substrate, andthe second portion of the protective film is closer to the semiconductorsubstrate than the first portion of the protective film.
 13. Anelectronic apparatus, comprising: a semiconductor device including: asemiconductor substrate; and a protective film on the semiconductorsubstrate, wherein the protective film covers a circuit surface of thesemiconductor device, a first section width of a first portion of theprotective film is greater than a section width of the semiconductorsubstrate, a second section width of a second portion of the protectivefilm is smaller than the section width of the semiconductor substrate,the first portion and the second portion of the protective film are on asame side of the semiconductor substrate, and the second portion of theprotective film is closer to the semiconductor substrate than the firstportion of the protective film.
 14. A method of manufacturing asemiconductor device, comprising: dividing a semiconductor substratesuch that the semiconductor substrate has a section width different froma section width of a protective film; forming the protective film on thesemiconductor substrate, wherein the protective film covers a circuitsurface of the semiconductor device during the division of thesemiconductor substrate; forming a slit along a dicing line in theprotective film, wherein a dicing tape is attached to the protectivefilm; cutting the semiconductor substrate with a blade to a positionthat reaches the slit; and increasing a width of the slit, by wetetching, after the cutting of the semiconductor substrate with theblade.